RF power amplifiers are reducing equipment, power consumption and operating cost for the RF communication infrastructure. RFaxis, a fabless semiconductor company focused on innovative, next-generation RF solutions for the wireless and connectivity markets, introduced the world's first commercial 5 GHz wideband linear power amplifier on silicon.
This new silicon-based power amplifier is designed to dramatically increase both range and throughput for demanding, data-intensive 802.11a/n/p wireless connectivity applications including: ultra mobile productivity devices including notebooks, netbooks, smartbooks, and e-readers, WLAN server devices including access points, routers and gateways, WiMAX/4G base stations, car-to-car/car-to-infrastructure WAVE (News - Alert) applications, high Definition (HD) multimedia streaming and Wireless Home Digital Interface (WHDI) support and cellular handsets and smartphones.
Mike Neshat, president and CEO of RFaxis said that to satisfy the compelling demand from leading Original Design Manufacturers, Multi-Chip Module makers and other high volume RFaxis customers for a silicon-based power amplifier for 5 GHz band applications, RFaxis once again demonstrates the versatility and robustness of its patent-pending RF Front-end IC (RFeIC) architecture.
In addition, Neshat said that the rapidly growing need for high data rate wireless connectivity throughout the home for the new generation of 3D HDTVs and HD multimedia streaming devices, reliable high-speed internet access and high-performance gaming is motivating our customers to accelerate their support of the 5 GHz spectrum to robustly deliver large volumes of high speed wireless data over a greater distance and this migration to the broad bandwidth 5 GHz spectrum is accelerated by a rapidly growing volume of WiMAX (News - Alert)/4G and WAVE projects underway to solidify the infrastructure for modern wireless connectivity.
It is a highly integrated, plug & play, RF-matched, linear power amplifier on silicon. It covers the full 802.11a/n/p frequency band (4.9 to 5.95 GHz) and is ideal for all 5 GHz systems. The RFP5001 delivers a maximum linear power greater than 19 dBm (News - Alert) and a gain greater than 20 dBm at a bias voltage of 3.3 volts. For a lower bias voltage of just 2.3 volts, the RFP5001 can still deliver a maximum linear power greater than 15 dBm for 54 Mbps OFDM signal with EVM less than 3.5 percent, making the RFP5001 ideal even for ultra-mobile, low battery voltage applications.